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Morphology, optical and AC electrical properties of nanostructure thin film of bromo indium phthalocyanine

Identifieur interne : 000872 ( Main/Repository ); précédent : 000871; suivant : 000873

Morphology, optical and AC electrical properties of nanostructure thin film of bromo indium phthalocyanine

Auteurs : RBID : Pascal:13-0362986

Descripteurs français

Pascal (Inist)
- Microstructure, Morphologie, Propriété électrique, Caractéristique électrique, Nanostructure, Structure sandwich, Evaporation faisceau électronique, Température ambiante, Microscopie électronique balayage, Diffraction RX, Absorption optique, Spectre absorption, Capacité électrique, Facteur dissipation, Théorie bandes, Couche mince, Indium, Phtalocyanine, Aluminium, 6865, 0779, 7840R, Matériau nanostructuré.
Wicri :
- concept : Aluminium.

English descriptors

KwdEn :
- Absorption spectrum, Aluminium, Band theory, Capacitance, Dissipation factor, Electrical characteristic, Electrical properties, Electron beam evaporation, Indium, Microstructure, Morphology, Nanostructure, Nanostructured material, Optical absorption, Phthalocyanine, Room temperature, Sandwich structure, Scanning electron microscopy, Thin film, X ray diffraction.

Abstract

Sandwich devices of bromo indium phthalocyanine (BrlnPc) thin films with aluminium electrodes were deposited on polyborosilicate substrate, using electron beam gun evaporation technique at room temperature. The AC electrical properties of nanostructure thin films (Al/BrInPc/Al) were examined in the temperature range of 303-393 K and frequency (f) between 10² and 10⁵ Hz. Structural and optical behaviour of samples were investigated by scanning electron microscope (SEM) images, X-ray diffraction (XRD) micrograph and optical absorption. Capacitance increase with increasing temperature for frequencies < 10³ Hz and is almost independent of temperature for the range of frequencies > 10³ Hz. Dissipation factor decrease with increasing frequency to a minimum value and increased noticeably thereafter. The AC electrical properties of nanostructured thin films of our materials are in agreement with the model of Goswami and Goswami. The band theory and hopping mechanism are applicable in explaining the conduction process for the frequency range of f< 10³ Hz and f> 10³ Hz, respectively.

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Pascal:13-0362986

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Morphology, optical and AC electrical properties of nanostructure thin film of bromo indium phthalocyanine</title>
<author><name sortKey="Azim Araghi, M E" uniqKey="Azim Araghi M">M. E. Azim-Araghi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Physics Division, Physics Department, Kharazmi University, 43 Mofateh Avenue</s1>
<s2>Tehran</s2>
<s3>IRN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Iran</country>
<wicri:noRegion>Tehran</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pirifard, F" uniqKey="Pirifard F">F. Pirifard</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Applied Physics Division, Physics Department, Kharazmi University, 43 Mofateh Avenue</s1>
<s2>Tehran</s2>
<s3>IRN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Iran</country>
<wicri:noRegion>Tehran</wicri:noRegion>
</affiliation>
</author>
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<publicationStmt><idno type="inist">13-0362986</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0362986 INIST</idno>
<idno type="RBID">Pascal:13-0362986</idno>
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<seriesStmt><idno type="ISSN">1369-8001</idno>
<title level="j" type="abbreviated">Mater. sci. semicond. process.</title>
<title level="j" type="main">Materials science in semiconductor processing</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectrum</term>
<term>Aluminium</term>
<term>Band theory</term>
<term>Capacitance</term>
<term>Dissipation factor</term>
<term>Electrical characteristic</term>
<term>Electrical properties</term>
<term>Electron beam evaporation</term>
<term>Indium</term>
<term>Microstructure</term>
<term>Morphology</term>
<term>Nanostructure</term>
<term>Nanostructured material</term>
<term>Optical absorption</term>
<term>Phthalocyanine</term>
<term>Room temperature</term>
<term>Sandwich structure</term>
<term>Scanning electron microscopy</term>
<term>Thin film</term>
<term>X ray diffraction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Microstructure</term>
<term>Morphologie</term>
<term>Propriété électrique</term>
<term>Caractéristique électrique</term>
<term>Nanostructure</term>
<term>Structure sandwich</term>
<term>Evaporation faisceau électronique</term>
<term>Température ambiante</term>
<term>Microscopie électronique balayage</term>
<term>Diffraction RX</term>
<term>Absorption optique</term>
<term>Spectre absorption</term>
<term>Capacité électrique</term>
<term>Facteur dissipation</term>
<term>Théorie bandes</term>
<term>Couche mince</term>
<term>Indium</term>
<term>Phtalocyanine</term>
<term>Aluminium</term>
<term>6865</term>
<term>0779</term>
<term>7840R</term>
<term>Matériau nanostructuré</term>
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<front><div type="abstract" xml:lang="en">Sandwich devices of bromo indium phthalocyanine (BrlnPc) thin films with aluminium electrodes were deposited on polyborosilicate substrate, using electron beam gun evaporation technique at room temperature. The AC electrical properties of nanostructure thin films (Al/BrInPc/Al) were examined in the temperature range of 303-393 K and frequency (f) between 10<sup>2</sup>
 and 10<sup>5</sup>
 Hz. Structural and optical behaviour of samples were investigated by scanning electron microscope (SEM) images, X-ray diffraction (XRD) micrograph and optical absorption. Capacitance increase with increasing temperature for frequencies < 10<sup>3</sup>
 Hz and is almost independent of temperature for the range of frequencies > 10<sup>3</sup>
 Hz. Dissipation factor decrease with increasing frequency to a minimum value and increased noticeably thereafter. The AC electrical properties of nanostructured thin films of our materials are in agreement with the model of Goswami and Goswami. The band theory and hopping mechanism are applicable in explaining the conduction process for the frequency range of f< 10<sup>3</sup>
 Hz and f> 10<sup>3</sup>
 Hz, respectively.</div>
</front>
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<fC01 i1="01" l="ENG"><s0>Sandwich devices of bromo indium phthalocyanine (BrlnPc) thin films with aluminium electrodes were deposited on polyborosilicate substrate, using electron beam gun evaporation technique at room temperature. The AC electrical properties of nanostructure thin films (Al/BrInPc/Al) were examined in the temperature range of 303-393 K and frequency (f) between 10<sup>2</sup>
 and 10<sup>5</sup>
 Hz. Structural and optical behaviour of samples were investigated by scanning electron microscope (SEM) images, X-ray diffraction (XRD) micrograph and optical absorption. Capacitance increase with increasing temperature for frequencies < 10<sup>3</sup>
 Hz and is almost independent of temperature for the range of frequencies > 10<sup>3</sup>
 Hz. Dissipation factor decrease with increasing frequency to a minimum value and increased noticeably thereafter. The AC electrical properties of nanostructured thin films of our materials are in agreement with the model of Goswami and Goswami. The band theory and hopping mechanism are applicable in explaining the conduction process for the frequency range of f< 10<sup>3</sup>
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<s5>11</s5>
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<s5>12</s5>
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<fC03 i1="12" i2="X" l="ENG"><s0>Absorption spectrum</s0>
<s5>12</s5>
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Morphology, optical and AC electrical properties of nanostructure thin film of bromo indium phthalocyanine

Morphology, optical and AC electrical properties of nanostructure thin film of bromo indium phthalocyanine

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri